A New Approach for Trap Analysis of Vertical Nand Flash Cell Using Rtn Characteristics
2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)（2014）
Key words
NAND circuits,flash memories,integrated circuit modelling,noise measurement,RTN characteristics,RTN method,V-NAND,back-gate structure,back-insulator,back-interface,back-side traps,random telegraph noise,trap analysis,vertical NAND flash cell
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