Microwave power performance of InP-based double heterojunction bipolar transistors for C- and X-band applications
San Diego, CA, USA（1994）
Key words
iii-v semiconductors,heterojunction bipolar transistors,indium compounds,power transistors,solid-state microwave devices,1 to 2 w,4.5 to 9 ghz,60 percent,c-band applications,inp,inp-based dhbt,shf,x-band applications,double heterojunction bipolar transistors,high efficiency,high power density,microwave power performance,power generation,power density
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined