Influence of Rapid Thermal Annealing Modes on the Parameters of Ni/21R-SiC Contacts
Microelectronics, 2002 MIEL 2002 23rd International Conference（2002）
Key words
Schottky diodes,nickel,ohmic contacts,rapid thermal annealing,silicon compounds,sputter deposition,wide band gap semiconductors,10 min,300 degC,450 degC,Ni-SiC,Ni-n-SiC,Schottky barriers,diode structures,heat-tolerant structures,ohmic contacts,rapid thermal annealing modes,resistive sputtering
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