Arsenic Dimer Implants for Shallow Extension in 0.13 Mu M Logic Devices

B Chang,J Chang,A Agarwal,MS Ameen,RN Reece, HI Chen, D Chien, CC Tsai, M Tsai, CL Weng,DY Wu,CK Yang

IIT2002 ION IMPLANTATION TECHNOLOGY, PROCEEDINGS（2003）

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Key words

CMOS logic circuits,arsenic,elemental semiconductors,equivalent circuits,ion implantation,leakage currents,semiconductor device breakdown,semiconductor doping,silicon,0.13 micron,0.13μm logic devices,1.5 V,As2+ dimer implants,CMOS logic process,Si:As2+,drive currents,gate to drain capacitance,junction breakdown voltages,monomer implants,shallow extension,sheet resistance,ultra-shallow source drain extensions

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