Issues in Nisi-Gated Fdsoi Device Integration
2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST（2003）
Key words
chemical mechanical polishing,nickel compounds,silicon-on-insulator,20 nm,NiSi,NiSi-gated FDSOI device integration,SOI,fully depleted silicon on insulator devices,gate CMP,gate length,nickel silicide phase stability,parasitic resistance,thin-body FDSOI
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