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Integration Challenges of New Materials and Device Architectures for IC Applications

BY Nguyen,A Thean,T White,A Vandooren,M Sadaka,L Mathew,A Barr,S Thomas, M Zalava,Da Zhang,D Eades,ZH Shi,J Schaeffer,D Triyoso,S Samavedam,V Vartanian, T Stephen,B Goolsby,S Zollner,R Liu,R Noble,T Nguyen,V Dhandapani, B Xie,XD Wang,J Jiang,R Rai,M Sadd,M Ramon,S Kalpat,L Prabhu,V Kaushik,Y Du,T Dao,M Mendicino,M Orlowski,P Tobin,J Mogab,S Venkatesan

2004 INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY（2004）

Cited 3|Views45
Key words
CMOS integrated circuits,MOSFET,VLSI,capacitance,dielectric thin films,leakage currents,low-power electronics,nanoelectronics,silicon-on-insulator,work function,CMOS devices,FDSOI,FinFET,capacitance equivalent thickness,gate leakage,high performance CMOS,high permittivity dielectric,low power CMOS,metal gate electrodes,new materials,threshold voltage,work function
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