Effect of Cu Line Capping Process on Stress Migration Reliability

M. -S. Yeh, H. L. Chang,C. H. Shih,C. J. Lin,T. Ko,H. W. Su,C. H. Chen,M. H. Tsai,Winston S. Shue,C. H. Yu,M. S. Liang

PROCEEDINGS OF THE IEEE 2006 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE（2006）

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Key words

copper,copper compounds,electromigration,integrated circuit interconnections,integrated circuit reliability,silicon,CuSi,SM performance,copper line capping process,dielectric capping layer,failure rates,stress gradient,stress migration reliability,vacancy surface migration

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