Application of Rhbd Techniques to Seu Hardening of Third-Generation Sige Hbt Logic Circuits

Ramkumar Krithivasan,Paul W. Marshall,Mustayeen Nayeem,Akil K. Sutton, Wei-Min Kuo,Becca M. Haugerud,Laleh Najafizadeh,John D. Cressler,Martin A. Carts,Cheryl J. Marshall, David L. Hansen, Kay-Carol M. Jobe, Anthony L. McKay,Guofu Niu,Robert Reed,Barbara A. Randall, Charles A. Burfield, Mary Daun Lindberg,Barry K. Gilbert,Erik S. Daniel

IEEE TRANSACTIONS ON NUCLEAR SCIENCE（2006）

引用 47|浏览4

关键词

current mode logic (CML),heavy ion,heterojunction bipolar transistor (HBT),radiation hardening by design (RHBD),shift register,silicon-germanium (SiGe),single-event upset (SEU),triple-module redundancy (TMR)

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