Impact of Fin Doping and Gate Stack on FinFET (110) and (100) Electron and Hole MobilitiesKerem Akarvardar,Chadwin D. Young,Mehmet O. Baykan,Injo Ok,Tat Ngai,Kah-Wee Ang,Martin P. Rodgers,Steven Gausepohl,Prashant Majhi,Chris Hobbs,Paul D. Kirsch,Raj JammyIEEE Electron Device Letters（2012）引用 23|浏览1关键词FinFET,high-K,metal gate,mobilityAI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
