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A New GIDL Phenomenon by Field Effect of Neighboring Cell Transistors and Its Control Solutions in Sub-30 Nm NAND Flash Devices

VLSI Technology(2012)

Cited 7|Views0
Key words
field effect transistors,flash memories,5-terminal GIDL model,GIDL phenomenon,NAND flash devices,NAND flash strings,field effect,neighboring cell transistors
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