Bilayer Graphene Vertical Tunneling Field Effect Transistor
Device Research Conference（2012）
Key words
Green's function methods,conduction bands,field effect transistors,graphene,low-power electronics,quantum wells,resonant tunnelling,tunnel transistors,valence bands,BiSFET,CB tunneling,NDR FET,bilayer graphene,component graphene layers,digital logic circuits,many-body superfluid state,negative differential resistance,nonequilibrium Green function,parallel quasi-2D quantum wells,perturbative tunneling Hamiltonian approach,resonant single electron conduction band,single particle tunneling,temperature 293 K to 298 K,tunnel barrier,ultra low voltage bilayer pseudospin FET,valence band symmetry,vertical tunneling field effect transistor
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