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Characterization & Modeling of Gate-Induced-drain-leakage with Complete Overlap and Fringing Model

D. Rideauo, V. Quenetteo,D. Garetto,E. Dornel,M. Weybright,J. P. Manceau, O. Saxodo, C. Taverniero, H. Jaoueno

2010 International Conference on Microelectronic Test Structures (ICMTS)(2010)

引用 4|浏览27
关键词
Leakage currents,MOSFETs,Tunneling
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