Methodology for the statistical evaluation of the effect of random telegraph noise (RTN) on RRAM characteristics
Electron Devices Meeting（2012）
关键词
normal distribution,random-access storage,semiconductor device noise,log(fom),rram characteristics,rram read current instability,rtn effect,figure of merit,high density rram array operational reliability,maximum size estimation,minimum operating current estimation,multilevel rtn-like signal,normal statistical distribution,peak-to-peak rtn amplitude,random telegraph noise effect,read current fluctuation occurrence probability,read current reduction,statistical evaluation,statistical model
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要