A 22nm High Performance Embedded DRAM SoC Technology Featuring Tri-Gate Transistors and MIMCAP COB
Symposium on VLSI Circuits（2013）
Key words
DRAM chips,MIM devices,capacitors,embedded systems,integrated circuit interconnections,integrated circuit metallisation,integrated circuit reliability,low-k dielectric thin films,system-on-chip,3D MIM capacitor,3D metal-insulator-metal capacitor trench,3D trigate transistor,DRAM cell,MIMCAP COB,ULK ILD,access transistor,array density,high aspect-ratio,high density DRAM,high performance circuit,high performance embedded DRAM SoC technology,high-performance logic device,interconnect stacks,leakage characteristics,metal-2 interconnects,metal-4 interconnects,metallization,performance characteristics,retention capability,size 22 nm,temperature 95 C,test-vehicle,ultra-low-k ILD,ultra-low-k interlayer dielectric,22nm,DRAM,MIM,embedded,interconnect,performance
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