3D Vertical TaOx/TiO2 RRAM with over 103 Self-Rectifying Ratio and Sub-Μa Operating Current
Electron Devices Meeting（2013）
Key words
random-access storage,rectifying circuits,tantalum,tantalum compounds,titanium,titanium compounds,3D double-layer vertical RRAM,Ta-TaOx-TiO2-Ti,data storage,high self-rectifying ratio,interfacial switching device,ultralow sub-μA operating current
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