Mapping Defect Density in MBE Grown ${\rm In}_{0.53}{\rm Ga}_{0.47}{\rm As}$ Epitaxial Layers on Si Substrate Using Esaki Diode Valley Characteristics
IEEE TRANSACTIONS ON ELECTRON DEVICES（2014）
关键词
III-V on Si,epi defect density,Esaki diode,excess current,negative differential resistance,tunneling
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