Mos Capacitor Deep Trench Isolation for Cmos Image Sensors

N. Ahmed,F. Roy,G-N Lu,B. Mamdy,J-P Carrere,A. Tournier,N. Virollet,C. Perrot,M. Rivoire,A. Seignard,D. Pellissier-Tanon,F. Leverd,B. Orlando

2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)（2014）

引用 22|浏览45

关键词

CMOS image sensors,MOS capacitors,elemental semiconductors,isolation technology,silicon,technology CAD (electronics),CDTI gate oxide thickness,CMOS image sensors,MOS capacitor deep trench isolation,Si,TCAD simulations,silicon samples

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要