Afterpulsing Characteristics of Free-Running and Time-Gated Single-Photon Avalanche Diodes in 130-Nm Cmos
IEEE TRANSACTIONS ON ELECTRON DEVICES（2015）
Key words
Afterpulsing,CMOS avalanche photodiode (APD),dark count rate (DCR),fluorescence lifetime imaging (FLIM),positron emission tomography (PET),Raman,single-photon avalanche diode (SPAD),time gating
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined