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Electron Tunneling Spectroscopy Study of Electrically Active Traps in Algan/Gan High Electron Mobility Transistors

Jie Yang,Sharon Cui,T. P. Ma,Ting-Hsiang Hung,Digbijoy Nath,Sriram Krishnamoorthy,Siddharth Rajan

Applied Physics Letters（2013）

Cited 29|Views22
Key words
Metal Gate Transistors,Double-Gate Transistors,Tunnel Field-Effect Transistors,AlGaN/GaN HEMTs
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