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Novel Heat Dissipating Cell Scheme for Improving A Reset Distribution in A 512m Phase-Change Random Access Memory (Pram)

D. H. Kang, J. S. Kim,Y. R. Kim,Y. T. Kim,M. K. Lee,Y. J. Jun,J. H. Park,F. Yeung,C. W. Jeong, J. Yu,J. H. Kong,D. W. Ha,S. A. Song,J. Park, Y. H. Park,Y. J. Song, C. Y. Eum,K. C. Ryoo,J. M. Shin,D. W. Lim,S. S. Park, J. H. Kim,W. I. Park, K. R. Sim,J. H. Cheong,J. H. Oh,J. I. Kim,Y. T. Oh,K. W. Lee, S. P. Koh,S. H. Eun,N. B. Kim,G. H. Koh,G. T. Jeong,H. S. Jeong,Kinam Kim

2007 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS（2007）

Cited 30|Views45
Key words
heat dissipating cell scheme,phase-change random access memory,partial crystallization,heat dissipating layer
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