Experimental/numerical Investigation of the Physical Mechanisms Behind Dc-to-rf Dispersion Effects in GaAs-based HFET's

G Verzellesi,AF Basile,A Cavallini,A Castaldini,C Lanzieri,C Canali

The 11th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2003 EDMO 2003

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III-V semiconductors,electron traps,field effect transistors,hole traps,numerical analysis,surface states,transient analysis,AlGaAs-GaAs,GaAs,GaAs-based HFETs,band bending,dc-to-RF dispersion effects,deep level transient spectroscopy,gate-lag,hole traps,numerical device simulations,numerical investigation,physical mechanisms,surface traps,transconductance frequency dispersion

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