Comparison of AlGaN/GaN HFETs and MOSHFETs in Prospect of Oscillator Design
The Eighth International Conference on Advanced Semiconductor Devices and Microsystems（2010）
关键词
S-parameters,aluminium compounds,gallium compounds,high electron mobility transistors,oscillators,AlGaN-GaN,HFET,MOSHFET,S-parameters,aluminium oxide underneath the gate,dielectric layer,equivalent circuit parameter extraction,frequency 120 GHz,frequency 28 GHz,frequency 78 GHz,gate drain capacitance,gate metallization,maximum oscillation frequency,oscillator design,size 300 nm,small signal analyses
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