Low-k Interconnect Stack with Multi-Layer Air Gap and Tri-Metal-insulator-metal Capacitors for 14nm High Volume Manufacturing

K. Fischer,M. Agostinelli,C. Allen, D. Bahr,M. Bost,P. Charvat,V. Chikarmane,Q. Fu, C. Ganpule,M. Haran, M. Heckscher,H. Hiramatsu, E. Hwang,P. Jain,I. Jin,R. Kasim, S. Kosaraju,K. S. Lee, H. Liu, R. McFadden,S. Nigam,R. Patel,C. Pelto,P. Plekhanov,M. Prince,C. Puls, S. Rajamani,D. Rao,P. Reese, A. Rosenbaum,S. Sivakumar, B. Song, M. Uncuer,S. Williams, M. Yang,P. Yashar,S. Natarajan

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)（2015）

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关键词

low-k interconnect stack,multilayer air gap,trimetal-insulator-metal capacitors,high volume manufacturing,high performance logic technology interconnects,back end stack,trimetal laminated metal-insulator-metal capacitor,MIM capacitor,size 14 nm

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