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Intrinsic Transistor Reliability Improvements From 22nm Tri-Gate Technology

Stephen M Ramey, A Ashutosh,C Auth, John J Clifford,M Hattendorf,J Hicks, Rob James,Aminur Rahman, Vishal Sharma,A St Amour,C Wiegand

2013 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS)（2013）

引用 156|浏览35
关键词
BTI, TDDB, HCI, reliability, FinFET, tri-gate
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