A New Phenomenon of Retention Time Evolution in Embedded DRAM Technology with High-K Dielectrics (ta2o5) MIM Capacitor after HTOL Test
2006 IEEE International Reliability Physics Symposium Proceedings（2006）
关键词
DRAM chips,MIM devices,capacitors,dielectric materials,embedded systems,hot carriers,integrated circuit testing,leakage currents,tantalum compounds,transistors,tunnelling,0.1 micron,HTOL test,MIM capacitor,Ta2O5,band-to-defect tunneling,cell transistors,embedded DRAM technology,failure bit count distribution,high-K dielectrics,hot carrier injection,junction leakage currents,leakage current reduction,off-state bias-temperature stress,retention time evolution
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