Tunable GaAs-based High Power Tapered Amplifiers in an External Cavity Setup
Munich（2009）
Key words
III-V semiconductors,aluminium compounds,electro-optical modulation,gallium arsenide,gallium compounds,indium compounds,laser cavity resonators,laser tuning,quantum well lasers,ridge waveguides,waveguide lasers,GaAs,GaInAs-AlGaAs-GaAs,compressively strained material,external cavity setup,gain-guided tapered section,high-power tunable tapered amplifier,index-guided ridge waveguide section,optical modulation,quantum well material system,size 7 nm,split contact design
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