Three Bits Per Cell Floating Gate Nand Flash Memory Technology For 30nm And Beyond

Hiroshi Nitta,Takeshi Kamigaichi,Fumihito Arai,Takuya Futatsuyama, M Endo, N Nishihara,T Murata,H Takekida,Teruo Izumi,K Uchida,T Maruyama,Itaru Kawabata,Yoko Suyama,Akihiro Sato,K Ueno,Hiroyuki T Takeshita, Y Joko,S Watanabe, Yan Liu,H Meguro,Atsushi Kajita, Yosuke Ozawa, Yasuhiro Takeuchi, T Hara,Tokiko Watanabe, Sandro S Sato, H Tomiie, Y Kanemaru,R Shoji, C H Lai, M Nakamichi,K Owada, Toru Ishigaki,Gertjan Hemink,D Dutta, Yongquan Dong, Changyu Chen,Gengchiau Liang,Masaaki Higashitani,Jeffrey W Lutze

2009 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, VOLS 1 AND 2（2009）

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dielectric constant,probability density function,logic gates,displays,data mining,programming,space technology,reliability,nanoelectronics,nonvolatile memory,electrodes,films

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