An Embedded Silicon-Carbon S/D Stressor Cmos Integration on Soi with Enhanced Carbon Incorporation by Laser Spike Annealing

P. Grudowski,V. Dhandapani,S. Zollner,D. Goedeke,K. Loiko,D. Tekleab,V. Adams,G. Spencer,H. Desjardins,L. Prabhu,R. Garcia,M. Foisy,D. Theodore,M. Bauer,D. Weeks,S. Thomas,A. Thean,B. White

2007 IEEE INTERNATIONAL SOI CONFERENCE PROCEEDINGS（2007）

引用 14|浏览46

关键词

channel resistance,NMOS performance enhancement,laser spike annealing,carbon incorporation,SOI,CMOS integration,embedded silicon-carbon source-drain stressor technology,Si-SiO2,Si:C

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