In0.53ga0.47as Mosfets with High Channel Mobility and Gate Stack Quality Fabricated on 300 Mm Si Substrate

M. L. Huang,S. W. Chang,M. K. Chen,C. H. Fan,H. T. Lin,C. H. Lin,R. L. Chu,K. Y. Lee,M. A. Khaderbad, Z. C. Chen,C. H. Chen,L. T. Lin,H. J. Lin,H. C. Chang, C. L. Yang,Y. K. Leung,Y. -C. Yeo,S. M. Jang,H. Y. Hwang,Carlos H. Diaz

2015 SYMPOSIUM ON VLSI TECHNOLOGY (VLSI TECHNOLOGY)（2015）

Cited 35|Views14

Key words

Si substrate,epitaxial In0.53Ga0.47As channel layer,Hall electron mobility,high field effect mobility,surface channel In0.53Ga0.47As MOSFET,gate stack quality,voltage 0.5 V,size 150 nm,size 300 mm,In0.53Ga0.47As,Si

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