Doping Profile Optimisation in Bulk Finfet Channel and Source/Drain Extension Regions for Low Off-State Leakage
International journal of nanotechnology（2015）
Key words
3-D simulations,band-to-band tunnelling leakage,doping profile,FinFETs,optimisation,PTSL,punch-through leakage,sub-threshold leakage,TCAD
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