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Ion-sensitive Field-Effect Transistor with Ssi/si0.5ge0.5/ssoi Quantum-Well for High Voltage Sensitivity

Jiao Wen,Qiang Liu,Chang Liu,Yize Wang,Bo Zhang,Zhongying Xue,Zengfeng Di,Jiahua Min,Wenjie Yu,Xinke Liu,Xi Wang,Qing-Tai Zhao

Microelectronic Engineering（2016）

Cited 1|Views19
Key words
SiGe,Quantum-well,Ion-sensitive field-effect transistor,Voltage sensitivity
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