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Forming-free Performance of A-Sin X :H-Based Resistive Switching Memory Obtained by Oxygen Plasma Treatment

Xinxin Zhang,Zhongyuan Ma,Hui Zhang,Jian Liu,Huafeng Yang, Yang Sun,Dinwen Tan,Wei Li,Ling Xu, Kuiji Chen,Duan Feng

Nanotechnology（2018）

Cited 8|Views50
Key words
SiN resistive switching memory,Si dangling bonds,plasma treatment
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