Replacement Metal Gate Resistance in FinFET Architecture Modelling, Validation and Extendibility

Ruqiang Bao,Brian Greene,Unoh Kwon,Sungjae Lee,John Bruley, Weike Wang,Kai Zhao, Patrick W. DeHaven,Zhengwen Li,Keith Wong,Stephan Grunow,Rama Divakaruni,Chung-Hsun Lin,Siddarth A. Krishnan,Vijay Narayanan

International Electron Devices Meeting（2015）

引用 4|浏览64

关键词

replacement metal gate resistance,FinFET architecture modelling,FinFET architecture validation,FinFET architecture extendibility,multiplicative model,tungsten film resistivity,tungsten electrode,highly-scaled gate length,RMG FinFET devices,gate conductance employment,gate stack film thickness monitoring,TiN-W

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