The Demonstration of Low-Cost and Logic Process Fully-Compatible OTP Memory on Advanced HKMG CMOS with a Newly Found Dielectric Fuse Breakdown
International Electron Devices Meeting（2015）
Key words
low-cost fully-compatible OTP memory,logic process fully-compatible OTP memory,advanced HKMG CMOS,newly-found dielectric fuse breakdown,polysilicon CMOS devices,antifuse dielectric breakdown,fuse-breakdown behavior,programming current,data retention,memory cell array,advanced CMOS technology,dense OTP functionality,OTP security functionality,OTP reliability functionality,IoT
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