Analysis of Oxide Trap Characteristics by Random Telegraph Signals in Nmosfets with HfO2-Based Gate Dielectrics

Ching-En Chen, Chang,Bo You,Jyun-Yu Tsai,Wen-Hung Lo,Szu-Han Ho,Kuan-Ju Liu,Ying-Hsin Lu,Xi-Wen Liu,Yu-Ju Hung,Tseung-Yuen Tseng,Osbert Cheng,Cheng-Tung Huang,Ching-Sen Lu

IEEE Electron Device Letters（2016）

引用 3|浏览41

关键词

Random telegraph signal (RTS),HfO2,Hf1-xZrxO2,multiphonon emission theory,relaxation energy,metal-oxide-semiconductor field-effect transistors (MOSFETs)

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