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Total Ionizing Dose Effects on Ge Channel $p$FETs with Raised ${\rm Si}_{0.55}{\rm Ge}_{0.45}$ Source/Drain

IEEE Transactions on Nuclear Science(2015)

Cited 9|Views15
Key words
Radiation effects,Negative bias temperature instability,Leakage currents,Transconductance,Degradation,Field effect transistors
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