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Demonstration of A Sub-0.03 Um(2) High Density 6-T Sram with Scaled Bulk Finfets for Mobile Soc Applications Beyond 10nm Node

Shien-Yang Wu,C. Y. Lin,M. C. Chiang,J. J. Liaw,J. Y. Cheng,C. H. Chang,V. S. Chang,K. H. Pan,C. H. Tsai,C. H. Yao,T. Miyashita, Y. K. Wu,K. C. Ting,C. H. Hsieh,R. F. Tsui,R. Chen, C. L. Yang,H. C. Chang, C. Y. Lee,K. S. Chen, Y. Ku,S. M. Jang

2016 IEEE SYMPOSIUM ON VLSI TECHNOLOGY（2016）

引用 10|浏览28
关键词
6T SRAM,FinFET devices,mobile SOC,CMOS technology,electrostatic,drain induced barrier lowering,DIBL,drive current,voltage 90 mV
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