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Analysis of TID Process, Geometry, and Bias Condition Dependence in 14-Nm FinFETs and Implications for RF and SRAM Performance

M. P. King, X. Wu,M. Eller,S. Samavedam,M. R. Shaneyfelt, A. I. Silva,B. L. Draper, W. C. Rice,T. L. Meisenheimer,J. A. Felix,E. X. Zhang,T. D. Haeffner,D. R. Ball,K. J. Shetler,M. L. Alles,J. S. Kauppila,L. W. Massengill

IEEE Transactions on Nuclear Science（2017）

引用 63|浏览63
关键词
FinFET,leakage current,threshold voltage shift,total ionizing dose
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