Extending the Functionality of Fdsoi N- and P-Fets to Light Sensing
2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)（2016）
Key words
SRAM cells,photodetectors,FDSOI-photodiode cointegration scheme,TCAD simulations,optical back biasing effect,sensing transistor,capacitive coupling,light-induced Vt shift,photogenerated carriers,visible light,buried oxide,FDSOI transistors,light sensing,FDSOI P-FET functionality,FDSOI N-FET functionality,Si
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