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Analysis of Dark Currents and Deep Level Traps in InP- and GaAs-based in 0.83 Ga 0.17 As Photodetectors

X. Y. Chen,Y. G. Zhang,Y. Gu,X. L. Ji,S. P. Xi,B. Du,Y. J. Ma,W. Y. Ji,Y. H. Shi,A. Z. Li

Journal of Crystal Growth（2017）

Cited 8|Views34
Key words
Defects,Molecular beam epitaxy,Semiconducting III-V materials,Infrared devices
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