Predictive TCAD for NBTI Stress-Recovery in Various Device Architectures and Channel Materials
2017 IEEE International Reliability Physics Symposium (IRPS)（2017）
关键词
TCAD,NBTI,Si channel,SiGe channel,FinFET,GAA NWFET,Interface trap generation,Hole trapping,End Of Life (EOL) degradation,Voltage Acceleration Factor (VAF)
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