Stacked Nanosheet Gate-All-around Transistor to Enable Scaling Beyond FinFETN. Loubet,T. Hook,P. Montanini,C. -W. Yeung,S. Kanakasabapathy,M. Guillorn,T. Yamashita,J. Zhang,X. Miao,J. Wang,A. Young,R. Chao, M. Kang,Z. Liu,S. Fan,B. Hamieh,S. Sieg,Y. Mignot,W. Xu,S. -C. Seo,J. Yoo,S. Mochizuki,M. Sankarapandian,O. Kwon,A. Carr,A. Greene,Y. Park,J. Frougier,R. Galatage,R. Bao,J. Shearer,R. Conti, H. Song,D. Lee,D. Kong,Y. Xu,A. Arceo,Z. Bi,P. Xu, R. Muthinti,J. Li,R. Wong, D. Brown,P. Oldiges,R. Robison,J. Arnold,N. Felix,S. Skordas,J. Gaudiello,T. Standaert,H. Jagannathan,D. Corliss,M. -H. Na,A. Knorr,T. Wu,D. Gupta,S. Lian,R. Divakaruni, T. Gow,C. Labelle,S. Lee,V. Paruchuri,H. Bu,M. Khare2017 Symposium on VLSI Technology（2017）引用 804|浏览87关键词VLSI,Gate-All-Around,Nanosheet,FinFETAI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
