Impact of Underlap Spacer Region Variation on Electrostatic and Analog Performance of Symmetrical High-K SOI FinFET at 20 Nm Channel Length
JOURNAL OF SEMICONDUCTORS（2017）
关键词
SOI FinFET,SCEs,underlap region,DIBL,analog and RF performance
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要