Modeling Transient Negative Capacitance in Steep-Slope FeFETs

We report on measurements and modeling of ferroelectric (FE) HfZrO/SiO2 FE–dielectric FETs, which indicate that many of the phenomena attributed to negative capacitance (NC) can be explained by a delayed response of FE-domain switching—referred to as transient NC (TNC). No traversal of the stabilized NC branch is required. Modeling is used to correlate the hysteretic properties of the FE material to the measured transient and subthreshold slope (SS) behavior. It is found that steep SS can be understood as a transient phenomenon and is present when significant polarization changes occur. The experimental signature of the TNC is investigated, and guidelines for detecting it in measured data are outlined. The technological implications of FE polarization switching are investigated, and it is found that NCFETs relying on it are not suitable for high-performance CMOS logic due to voltage, frequency, and hysteresis limitations. Requirements for experimental evidence of stabilized S-curve behavior are summarized.