Hot Carrier Aging and Its Variation under Use-Bias: Kinetics, Prediction, Impact on Vdd and Sram
2015 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)（2015）
Key words
hot carrier aging,SRAM,CMOS scale,stress bias,use-bias,HCA-induced variation,RTN,source measure-unit,SMU,erroneous power exponent,static random access memory,kinetics
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