Investigation of Abnormal Off-Current in P-Channel Double Diffused Drain Metal-Oxide-semiconductor Transistors after Hot Carrier Stress
2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)（2016）
关键词
abnormal off-current,p-channel double diffused drain metal-oxide-semiconductor transistors,hot carrier stress,DDDMOS transistors,apparent current,process flows,STI fabrication
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