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Device Instability of ReRAM and a Novel Reference Cell Design for Wide Temperature Range Operation

Y. H. Lin,Y. Y. Lin,F. M. Lee,Y. H. Ho,K. C. Hsu,M. H. Lee,D. Y. Lee,K. H. Chiang,C. C. Yang,C. H. Li, S. W. Wu, C. Y. Lei, C. M. Lin, C. J. Chen,K. H. Chen,H. L. Lung,K. C. Wang,T. Y. Tseng,C. Y. Lu

IEEE Electron Device Letters（2017）

Cited 12|Views76
Key words
Resistive random access memory,transition metal oxide,noise,stability,temperature dependency
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