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Self-assembled C-Axis Oriented Δ-Mon Thin Films on Si Substrates by Chemical Solution Deposition: Growth, Transport and Superconducting Properties

Journal of Alloys and Compounds(2017)SCI 2区

Chinese Acad Sci | New Mexico State Univ

Cited 13|Views32
Abstract
Molybdenum nitrides Mo-N are considered as the hardest superconducting metal nitrides, which are usually prepared under high pressure and high temperature to obtain high superconducting transition temperature T. Here, polycrystalline I-MoN thin films with self-assembled c-axis orientation are directly deposited onto Si substrates by chemical solution deposition under ambient NH3 annealing atmosphere without high pressure processing. The prepared delta-MoN/Si thin films show T-c higher than 12 K. The normal state resistivity obeys electron-phonon scattering mechanism and can be well fitted by BlochGrilneisen expression. The results will provide an effective route to prepare large-area delta-MoN/Si thin films with high T-c as well as a guidance to investigate the fundamental properties of polycrystalline delta-MoN thin films.(C) 2017 Elsevier B.V. All rights reserved.
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I-MoN,Thin films,Self-assembled orientation,Chemical solution deposition
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要点】:本研究通过化学溶液沉积法在Si基底上制备了具有自组装c轴取向的多晶Δ-MoN薄膜,实现了高于12K的超导转变温度Tc,为制备大面积高Tc的Δ-MoN/Si薄膜提供了有效途径。

方法】:采用化学溶液沉积法在NH3气氛下进行常压退火,直接在Si基底上制备出具有自组装c轴取向的Δ-MoN薄膜。

实验】:实验中制备的Δ-MoN/Si薄膜在正常态下的电阻率遵循电子-声子散射机制,其数据符合BlochGrilneisen表达式,数据集名称未在摘要中提及,但实验结果表明薄膜具有超导性能。