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Key Parameters Affecting Stt-Mram Switching Efficiency And Improved Device Performance Of 400 Degrees C-Compatible P-Mtjs

G. Hu,M. G. Gottwald,Q. He,J. H. Park,G. Lauer,J. J. Nowak,S. L. Brown,B. Doris,D. Edelstein,E. R. Evarts,P. Hashemi,B. Khan,Y. H. Kim,C. Kothandaraman,N. Marchack,E. J. O'Sullivan,M. Reuter,R. P. Robertazzi,J. Z. Sun,T. Suwannasiri,P. L. Trouilloud,Y. Zhu,D. C. Worledge

international electron devices meeting（2017）

引用 11|浏览81
关键词
stt-mram,c-compatible,p-mtjs
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