Radiation Response of AlGaN-Channel HEMTs

M. J. Martinez,M. P. King,A. G. Baca,A. A. Allerman,A. A. Armstrong,B. A. Klein,E. A. Douglas,R. J. Kaplar,S. E. Swanson

IEEE Transactions on Nuclear Science（2018）

Cited 27|Views108

Key words

Aluminum gallium nitride (AlGaN),aluminum nitride (AlN),burnout,displacement damage (DD),heavy ion,high electron mobility transistor (HEMT),failure analysis,gallium nitride (GaN),heavy ions,heavy ion testing,power,proton,radiation effects,radiation effects in devices,radiation-hardness assurance,radiation-hardness assurance testing,semiconductor device breakdown,semiconductor device radiation effects,silicon,single-event burnout (SEB),single-event effects,total ionizing dose (TID)

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